Vishay Siliconix - SI4966DY-T1-GE3

KEY Part #: K6524016

SI4966DY-T1-GE3 Utu (USD) [3973Stock Ngahau]

  • 2,500 pcs$0.43461

Te waahanga waahanga:
SI4966DY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 20V 8SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Tauhoko - DIACs, SIDACs, Te Tauira P taraihi Mana, Diode - Zener - Tuhinga, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Kotahi, Tauhoko - TRIACs and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI4966DY-T1-GE3 electronic components. SI4966DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4966DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4966DY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4966DY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 20V 8SOIC
Toa : TrenchFET®
Wāhanga wahi : Obsolete
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 50nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Te Mana - Max : 2W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)
Paetukutuku Pūrere Kaiwhakarato : 8-SO

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