IPP086N10N3GXKSA1 Utu (USD) [50552Stock Ngahau]
- 1 pcs$0.79021
- 10 pcs$0.70157
- 100 pcs$0.55436
- 500 pcs$0.42992
- 1,000 pcs$0.32107
- Te waahanga waahanga:
- IPP086N10N3GXKSA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 100V 80A TO220-3.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - DIACs, SIDACs, Te Tauira P taraihi Mana and Diode - Kaiwhiwhi - Kotahi ...
- Whakapai Tinana:
- We specialize in Infineon Technologies IPP086N10N3GXKSA1 electronic components. IPP086N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP086N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP086N10N3GXKSA1 Nga Hua Hua
Te waahanga waahanga :
IPP086N10N3GXKSA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 100V 80A TO220-3
Toa :
OptiMOS™
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
100V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8.6 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 75µA
Kaari Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
3980pF @ 50V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
125W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Through Hole
Paetukutuku Pūrere Kaiwhakarato :
PG-TO220-3
Paepae / Take :
TO-220-3
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