Vishay Siliconix - SIS778DN-T1-GE3

KEY Part #: K6401173

[3142Stock Ngahau]


    Te waahanga waahanga:
    SIS778DN-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 30V 35A POWERPAK1212.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Kotahi, Diode - Kaiwhiwhi - Kotahi, Tauhoko - SCR - Mahi, Transistors - FET, MOSFETs - RF, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Arrays ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SIS778DN-T1-GE3 electronic components. SIS778DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS778DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIS778DN-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SIS778DN-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 30V 35A POWERPAK1212
    Toa : -
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 35A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 42.5nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1390pF @ 15V
    Āhuahanga FET : Schottky Diode (Body)
    Te Whakamau Kaha (Max) : 52W (Tc)
    Taumaha Mahi : -50°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8
    Paepae / Take : PowerPAK® 1212-8