Keystone Electronics - 8610

KEY Part #: K7359536

8610 Utu (USD) [217491Stock Ngahau]

  • 1 pcs$0.19775
  • 10 pcs$0.17481
  • 50 pcs$0.12735
  • 100 pcs$0.12233
  • 250 pcs$0.10985
  • 1,000 pcs$0.08738
  • 2,500 pcs$0.07989
  • 5,000 pcs$0.07490

Te waahanga waahanga:
8610
Kaihanga:
Keystone Electronics
Whakaahuatanga Taipitopito:
PLUG HOLE NYLON 1.375 DIA. Lamps 6.3V 4mm Round T1.25 Wire Terminals
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tepara, Bolts, Nga Herepapa Hole, Herenga, Washers - Puki, Whakahihi, Kaitohu Haapuiti, Horoi, Tihorihi and Huinga whakahiato, Maunga, Taakahu ...
Whakapai Tinana:
We specialize in Keystone Electronics 8610 electronic components. 8610 can be shipped within 24 hours after order. If you have any demands for 8610, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

8610 Nga Hua Hua

Te waahanga waahanga : 8610
Kaihanga : Keystone Electronics
Whakaahuatanga : PLUG HOLE NYLON 1.375 DIA
Toa : -
Wāhanga wahi : Active
Momo : Body Plug
Tae : Black
Ahumahi : Nylon
Haerenui Hole : 1.375" (34.93mm)
Flange Diameter : 1.500" (38.10mm) 1 1/2"
Matapihi Panui : 0.125" (3.18mm) 1/8"

Kia Korero Ma Te Korero
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.