Vishay Siliconix - SISB46DN-T1-GE3

KEY Part #: K6523083

SISB46DN-T1-GE3 Utu (USD) [244678Stock Ngahau]

  • 1 pcs$0.15117
  • 3,000 pcs$0.14225

Te waahanga waahanga:
SISB46DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 40V POWERPAK 1212-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Taumanako - SCR, Tauhou - IGBT - Mahi, Diode - RF, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) and Transistors - Takenga Motuhake ...
Whakapai Tinana:
We specialize in Vishay Siliconix SISB46DN-T1-GE3 electronic components. SISB46DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISB46DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISB46DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SISB46DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET 2N-CH 40V POWERPAK 1212-8
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 34A (Tc)
Rds On (Max) @ Id, Vgs : 11.71 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1100pF @ 20V
Te Mana - Max : 23W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : PowerPAK® 1212-8 Dual
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8 Dual

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