Vishay Siliconix - SIS406DN-T1-GE3

KEY Part #: K6393441

SIS406DN-T1-GE3 Utu (USD) [269141Stock Ngahau]

  • 1 pcs$0.13743
  • 3,000 pcs$0.12932

Te waahanga waahanga:
SIS406DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 9A 1212-8 PPAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Tauhoko - TRIACs, Tauhoko - SCR - Mahi, Diode - Kaiwhiwhi - Kotahi and Tauhoko - DIACs, SIDACs ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIS406DN-T1-GE3 electronic components. SIS406DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS406DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS406DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIS406DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 30V 9A 1212-8 PPAK
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±25V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1100pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.5W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8
Paepae / Take : PowerPAK® 1212-8