SIHG33N65EF-GE3 Utu (USD) [11793Stock Ngahau]
- 1 pcs$3.37135
- 10 pcs$3.03334
- 100 pcs$2.49405
- 500 pcs$2.08962
- 1,000 pcs$1.82000
- Te waahanga waahanga:
- SIHG33N65EF-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 650V 31.6A TO-247AC.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - DIACs, SIDACs, Transistors - Takenga Motuhake, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - IGBTs - Arrays and Transistors - Whakahoahoa Whakahoahoa ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHG33N65EF-GE3 electronic components. SIHG33N65EF-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG33N65EF-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG33N65EF-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHG33N65EF-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 650V 31.6A TO-247AC
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
650V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
31.6A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
109 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
171nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
4026pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
313W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Through Hole
Paetukutuku Pūrere Kaiwhakarato :
TO-247AC
Paepae / Take :
TO-247-3
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