Vishay Siliconix - SIHB22N60S-GE3

KEY Part #: K6400781

[3278Stock Ngahau]


    Te waahanga waahanga:
    SIHB22N60S-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 650V TO263.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - IGBTs - Arrays, Transistors - IGBTs - Kotahi, Te Tauira P taraihi Mana, Tauhoko - TRIACs, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased and Taumanako - SCR ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SIHB22N60S-GE3 electronic components. SIHB22N60S-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60S-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIHB22N60S-GE3 Nga Hua Hua

    Te waahanga waahanga : SIHB22N60S-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 650V TO263
    Toa : S
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 22A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 190 mOhm @ 11A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 110nC @ 10V
    Vgs (Max) : ±30V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2.81nF @ 25V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 250W (Tc)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263)
    Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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