RQ3E080BNTB Utu (USD) [880615Stock Ngahau]
- 1 pcs$0.04643
- 3,000 pcs$0.04620
- Te waahanga waahanga:
- RQ3E080BNTB
- Kaihanga:
- Rohm Semiconductor
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 30V 8A HSMT8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - Whakahoahoa Whakahoahoa, Diode - Zener - Kotahi, Tauhoko - TRIACs, Taumanako - SCR, Transistors - Bipolar (BJT) - RF, Diode - RF and Diode - Rectifiers - Arrays ...
- Whakapai Tinana:
- We specialize in Rohm Semiconductor RQ3E080BNTB electronic components. RQ3E080BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E080BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E080BNTB Nga Hua Hua
Te waahanga waahanga :
RQ3E080BNTB
Kaihanga :
Rohm Semiconductor
Whakaahuatanga :
MOSFET N-CH 30V 8A HSMT8
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
8A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
15.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
660pF @ 15V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
2W (Ta)
Taumaha Mahi :
150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
8-HSMT (3.2x3)
Paepae / Take :
8-PowerVDFN
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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