Vishay Siliconix - SISH112DN-T1-GE3

KEY Part #: K6411678

SISH112DN-T1-GE3 Utu (USD) [132616Stock Ngahau]

  • 1 pcs$0.27891

Te waahanga waahanga:
SISH112DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 1212-8 PPAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Kaiwhiwhi - Kotahi, Diode - Zener - Tuhinga, Transistors - FET, MOSFETs - RF, Tauhoko - TRIACs, Diode - Zener - Kotahi, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays and Diode - RF ...
Whakapai Tinana:
We specialize in Vishay Siliconix SISH112DN-T1-GE3 electronic components. SISH112DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH112DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISH112DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SISH112DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 30V 1212-8 PPAK
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 11.3A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 17.8A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 27nC @ 4.5V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2610pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.5W (Tc)
Taumaha Mahi : -50°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8SH
Paepae / Take : PowerPAK® 1212-8SH

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