[1488Stock Ngahau]
- Te waahanga waahanga:
- SIE836DF-T1-E3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 200V 18.3A POLARPAK.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Diode - Kaiwhiwhi - Kotahi, Diode - Rectifiers - Arrays, Tauhoko - DIACs, SIDACs, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Arrays, Diode - RF and Diode - Zener - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIE836DF-T1-E3 electronic components. SIE836DF-T1-E3 can be shipped within 24 hours after order. If you have any demands for SIE836DF-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE836DF-T1-E3 Nga Hua Hua
Te waahanga waahanga :
SIE836DF-T1-E3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 200V 18.3A POLARPAK
Toa :
TrenchFET®
Wāhanga wahi :
Obsolete
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
200V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
18.3A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 4.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1200pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
5.2W (Ta), 104W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
10-PolarPAK® (SH)
Paepae / Take :
10-PolarPAK® (SH)
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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