SI7613DN-T1-GE3 Utu (USD) [183951Stock Ngahau]
- 1 pcs$0.20107
- 3,000 pcs$0.18881
- Te waahanga waahanga:
- SI7613DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 20V 35A 1212-8 PPAK.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Nga Kete Aiana, Transistors - Whakahoahoa Whakahoahoa, Transistors - JFET, Diode - RF, Transistors - IGBTs - Kotahi and Taumanako - SCR ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI7613DN-T1-GE3 electronic components. SI7613DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7613DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7613DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI7613DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 20V 35A 1212-8 PPAK
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.7 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
2620pF @ 10V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
3.8W (Ta), 52.1W (Tc)
Taumaha Mahi :
-50°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8
Paepae / Take :
PowerPAK® 1212-8
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