SIHB35N60E-GE3 Utu (USD) [13208Stock Ngahau]
- 1 pcs$3.12016
- 10 pcs$2.78743
- 100 pcs$2.28569
- 500 pcs$1.85085
- 1,000 pcs$1.56096
- Te waahanga waahanga:
- SIHB35N60E-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 600V 32A D2PAK TO263.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, Diode - RF, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - FETs, MOSFETs - Arrays and Transistors - JFET ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHB35N60E-GE3 electronic components. SIHB35N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB35N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB35N60E-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHB35N60E-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 600V 32A D2PAK TO263
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
650V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
32A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
94 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
2760pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
250W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
D²PAK (TO-263)
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nga Pūrongo Hou
Kia Korero Ma Te Korero
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