RN1901FETE85LF Utu (USD) [1335257Stock Ngahau]
- 1 pcs$0.02770
- Te waahanga waahanga:
- RN1901FETE85LF
- Kaihanga:
- Toshiba Semiconductor and Storage
- Whakaahuatanga Taipitopito:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Zener - Tuhinga, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - RF, Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Kotahi and Transistors - FET, MOSFETs - RF ...
- Whakapai Tinana:
- We specialize in Toshiba Semiconductor and Storage RN1901FETE85LF electronic components. RN1901FETE85LF can be shipped within 24 hours after order. If you have any demands for RN1901FETE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1901FETE85LF Nga Hua Hua
Te waahanga waahanga :
RN1901FETE85LF
Kaihanga :
Toshiba Semiconductor and Storage
Whakaahuatanga :
TRANS 2NPN PREBIAS 0.1W ES6
Toa :
-
Wāhanga wahi :
Active
Momo Whakawhiti :
2 NPN - Pre-Biased (Dual)
Te Oranga - Te Kaikohi (Ic) (Max) :
100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) :
50V
Kaihautū - Papa (R1) :
4.7 kOhms
Kaikuhiko - Papa Rawhiti (R2) :
4.7 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
I tenei wa - Kohinga Kohinga (Max) :
100nA (ICBO)
Auau - Te whakawhiti :
250MHz
Te Mana - Max :
100mW
Momo Momo :
Surface Mount
Paepae / Take :
SOT-563, SOT-666
Paetukutuku Pūrere Kaiwhakarato :
ES6
Nga Pūrongo Hou
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