SI2306BDS-T1-GE3 Utu (USD) [398557Stock Ngahau]
- 1 pcs$0.09280
- 3,000 pcs$0.08766
- Te waahanga waahanga:
- SI2306BDS-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 30V 3.16A SOT23-3.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Taumanako - SCR, Te Tauira P taraihi Mana, Tauhoko - TRIACs, Diode - Zener - Tuhinga, Tauhou - IGBT - Mahi, Transistors - JFET and Transistors - Bipolar (BJT) - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI2306BDS-T1-GE3 electronic components. SI2306BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2306BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2306BDS-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI2306BDS-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 30V 3.16A SOT23-3
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
3.16A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
47 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
4.5nC @ 5V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
305pF @ 15V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
750mW (Ta)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
SOT-23-3 (TO-236)
Paepae / Take :
TO-236-3, SC-59, SOT-23-3
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