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  1. Whare
  2. Nga Hua
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BYH9

Samsung Semiconductor - K4B4G1646D-BYH9

KEY Part #: K7359695

[20056Stock Ngahau]

    Te waahanga waahanga:
    K4B4G1646D-BYH9
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: GDDR6, MODULE, LPDDR4, HBM Aquabolt, GDDR5, DDR4, DDR3 and LPDDR4X ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4B4G1646D-BYH9 electronic components. K4B4G1646D-BYH9 can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYH9, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BYH9 Nga Hua Hua

    Te waahanga waahanga : K4B4G1646D-BYH9
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Toa : DDR3
    kiato : 4 Gb
    Org. : 256M x 16
    tere : 1333 Mbps
    ngaohiko : 1.35 V
    Temp. : 0 ~ 85 °C
    mōkī : 96FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Speed for the next generation of mobile devices
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Evolving Mobile Solutions: Samsung at MWC 2018
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Autonomous Driving and the Quest for Safety
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Kia Korero Ma Te Korero
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Nga Wahanga Panu