Infineon Technologies - IPB60R199CPAATMA1

KEY Part #: K6417842

IPB60R199CPAATMA1 Utu (USD) [42916Stock Ngahau]

  • 1 pcs$0.91108
  • 1,000 pcs$0.83581

Te waahanga waahanga:
IPB60R199CPAATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - FET, MOSFETs - RF, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kotahi, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Tauhou - IGBT - Mahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R199CPAATMA1 Nga Hua Hua

Te waahanga waahanga : IPB60R199CPAATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH TO263-3
Toa : Automotive, AEC-Q101, CoolMOS™
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 16A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.1mA
Kaari Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1520pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 139W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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