IPD80R1K0CEATMA1 Utu (USD) [122915Stock Ngahau]
- 1 pcs$0.30092
- 2,500 pcs$0.24576
- Te waahanga waahanga:
- IPD80R1K0CEATMA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 800V 5.7A TO252-3.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Taumanako - SCR, Transistors - JFET, Diode - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Kotahi, Transistors - IGBTs - Kotahi and Transistors - FET, MOSFETs - RF ...
- Whakapai Tinana:
- We specialize in Infineon Technologies IPD80R1K0CEATMA1 electronic components. IPD80R1K0CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R1K0CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R1K0CEATMA1 Nga Hua Hua
Te waahanga waahanga :
IPD80R1K0CEATMA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 800V 5.7A TO252-3
Toa :
CoolMOS™ CE
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
800V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
5.7A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
785pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
83W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PG-TO252-3
Paepae / Take :
TO-252-3, DPak (2 Leads + Tab), SC-63
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