BSZ0901NSIATMA1 Utu (USD) [176341Stock Ngahau]
- 1 pcs$0.20975
- Te waahanga waahanga:
- BSZ0901NSIATMA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 30V 40A TSDSON.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Kotahi, Taumanako - SCR, Te Tauira P taraihi Mana, Diode - Rectifiers - Arrays and Transistors - IGBTs - Kotahi ...
- Whakapai Tinana:
- We specialize in Infineon Technologies BSZ0901NSIATMA1 electronic components. BSZ0901NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0901NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0901NSIATMA1 Nga Hua Hua
Te waahanga waahanga :
BSZ0901NSIATMA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 30V 40A TSDSON
Toa :
OptiMOS™
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
25A (Ta), 40A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
2600pF @ 15V
Āhuahanga FET :
Schottky Diode (Body)
Te Whakamau Kaha (Max) :
2.1W (Ta), 69W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PG-TSDSON-8-FL
Paepae / Take :
8-PowerTDFN
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