Infineon Technologies - BSZ0901NSIATMA1

KEY Part #: K6420265

BSZ0901NSIATMA1 Utu (USD) [176341Stock Ngahau]

  • 1 pcs$0.20975

Te waahanga waahanga:
BSZ0901NSIATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 40A TSDSON.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Kaiwhiwhi - Kotahi, Tauhoko - TRIACs, Transistors - JFET, Tauhoko - SCR - Mahi and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ0901NSIATMA1 Nga Hua Hua

Te waahanga waahanga : BSZ0901NSIATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 30V 40A TSDSON
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 25A (Ta), 40A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2600pF @ 15V
Āhuahanga FET : Schottky Diode (Body)
Te Whakamau Kaha (Max) : 2.1W (Ta), 69W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TSDSON-8-FL
Paepae / Take : 8-PowerTDFN