Murata Electronics North America - NFM21PC105B1A3D

KEY Part #: K7359534

NFM21PC105B1A3D Utu (USD) [948493Stock Ngahau]

  • 1 pcs$0.03919
  • 4,000 pcs$0.03900
  • 8,000 pcs$0.03670
  • 12,000 pcs$0.03441
  • 28,000 pcs$0.03211

Te waahanga waahanga:
NFM21PC105B1A3D
Kaihanga:
Murata Electronics North America
Whakaahuatanga Taipitopito:
CAP FEEDTHRU 1UF 20 10V 0805. Feed Through Capacitors 1 uF 10V 4.0A EMI FILTER
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Nga taputapu, Tātari RF, Poroakau Ferrite me te Chip, Rauemi EMI / RFI (LC, RC Networks), Helical Filters, Tātari Tātari Raina Power, Papa Maama me te papa pereti and Tutei Kaetapeke noa ...
Whakapai Tinana:
We specialize in Murata Electronics North America NFM21PC105B1A3D electronic components. NFM21PC105B1A3D can be shipped within 24 hours after order. If you have any demands for NFM21PC105B1A3D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NFM21PC105B1A3D Nga Hua Hua

Te waahanga waahanga : NFM21PC105B1A3D
Kaihanga : Murata Electronics North America
Whakaahuatanga : CAP FEEDTHRU 1UF 20 10V 0805
Toa : EMIFIL®, NFM21
Wāhanga wahi : Active
Te Raukaha : 1µF
Tika : ±20%
Tauira - Whakatau : 10V
Te Ao : 4A
Te Awhina DC (DCR) (Max) : 20 mOhm
Taumaha Mahi : -40°C ~ 85°C
Te Whakauru Whiriwhiria : -
Huihuinga : -
Whakatauranga : -
Momo Momo : Surface Mount
Paepae / Take : 0805 (2012 Metric), 3 PC Pad
Rahi / Rahi : 0.079" L x 0.049" W (2.00mm x 1.25mm)
Te teitei (Max) : 0.037" (0.95mm)
Rahi anga : -

Kia Korero Ma Te Korero
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.