SIS903DN-T1-GE3 Utu (USD) [201147Stock Ngahau]
- 1 pcs$0.18388
- Te waahanga waahanga:
- SIS903DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - Takenga Motuhake, Diode - Zener - Tuhinga, Transistors - Whakahoahoa Whakahoahoa, Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Arrays, Te Tauira P taraihi Mana and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SIS903DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET DUAL P-CHAN POWERPAK 1212
Toa :
TrenchFET® Gen III
Wāhanga wahi :
Active
Momo FET :
2 P-Channel (Dual)
Āhuahanga FET :
Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
2565pF @ 10V
Te Mana - Max :
2.6W (Ta), 23W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
PowerPAK® 1212-8 Dual
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8 Dual
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