Infineon Technologies - BSZ0910NDXTMA1

KEY Part #: K6525289

BSZ0910NDXTMA1 Utu (USD) [171885Stock Ngahau]

  • 1 pcs$0.21519

Te waahanga waahanga:
BSZ0910NDXTMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
DIFFERENTIATED MOSFETS.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Kaiwhiwhi - Kotahi, Taumanako - SCR, Transistors - JFET, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) and Tauhoko - TRIACs ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ0910NDXTMA1 Nga Hua Hua

Te waahanga waahanga : BSZ0910NDXTMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : DIFFERENTIATED MOSFETS
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate, 4.5V Drive
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 5.6nC @ 4.5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 800pF @ 15V
Te Mana - Max : 1.9W (Ta), 31W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-PowerVDFN
Paetukutuku Pūrere Kaiwhakarato : PG-WISON-8