Infineon Technologies - IPN80R900P7ATMA1

KEY Part #: K6420088

IPN80R900P7ATMA1 Utu (USD) [158903Stock Ngahau]

  • 1 pcs$0.23530
  • 3,000 pcs$0.23413

Te waahanga waahanga:
IPN80R900P7ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CHANNEL 800V 6A SOT223.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
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Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN80R900P7ATMA1 Nga Hua Hua

Te waahanga waahanga : IPN80R900P7ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CHANNEL 800V 6A SOT223
Toa : CoolMOS™ P7
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 800V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 6A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 110µA
Kaari Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 350pF @ 500V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 7W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-SOT223
Paepae / Take : TO-261-3