Infineon Technologies - BSP123E6327T

KEY Part #: K6410189

[22Stock Ngahau]


    Te waahanga waahanga:
    BSP123E6327T
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 100V 370MA SOT223.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Takenga Motuhake, Diode - Kaiwhiwhi - Kotahi, Diode - Zener - Tuhinga, Transistors - Whakahoahoa Whakahoahoa, Transistors - FET, MOSFETs - RF and Taumanako - SCR ...
    Whakapai Tinana:
    We specialize in Infineon Technologies BSP123E6327T electronic components. BSP123E6327T can be shipped within 24 hours after order. If you have any demands for BSP123E6327T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSP123E6327T Nga Hua Hua

    Te waahanga waahanga : BSP123E6327T
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 100V 370MA SOT223
    Toa : SIPMOS®
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 370mA (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 2.8V, 10V
    Rds On (Max) @ Id, Vgs : 6 Ohm @ 370mA, 10V
    Vgs (th) (Max) @ Id : 1.8V @ 50µA
    Kaari Gate (Qg) (Max) @ Vgs : 2.4nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 70pF @ 25V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 1.79W (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : PG-SOT223-4
    Paepae / Take : TO-261-4, TO-261AA