Toshiba Semiconductor and Storage - RN1103MFV,L3F

KEY Part #: K6526920

RN1103MFV,L3F Utu (USD) [4559Stock Ngahau]

  • 8,000 pcs$0.01146
  • 16,000 pcs$0.00997
  • 24,000 pcs$0.00897
  • 56,000 pcs$0.00797
  • 200,000 pcs$0.00664

Te waahanga waahanga:
RN1103MFV,L3F
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
TRANS PREBIAS NPN 150MW VESM.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Kotahi, Te Tauira P taraihi Mana, Diode - Kaiwhiwhi - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) and Transistors - Bipolar (BJT) - RF ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage RN1103MFV,L3F electronic components. RN1103MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1103MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1103MFV,L3F Nga Hua Hua

Te waahanga waahanga : RN1103MFV,L3F
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : TRANS PREBIAS NPN 150MW VESM
Toa : -
Wāhanga wahi : Active
Momo Whakawhiti : NPN - Pre-Biased
Te Oranga - Te Kaikohi (Ic) (Max) : 100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
Kaihautū - Papa (R1) : 22 kOhms
Kaikuhiko - Papa Rawhiti (R2) : 22 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
I tenei wa - Kohinga Kohinga (Max) : 500nA
Auau - Te whakawhiti : -
Te Mana - Max : 150mW
Momo Momo : Surface Mount
Paepae / Take : SOT-723
Paetukutuku Pūrere Kaiwhakarato : VESM

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