SIDR638DP-T1-GE3 Utu (USD) [87933Stock Ngahau]
- 1 pcs$0.44467
- Te waahanga waahanga:
- SIDR638DP-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 40V 100A SO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Transistors - FETs, MOSFETs - Arrays, Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Tauhoko - SCR - Mahi and Tauhoko - TRIACs ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIDR638DP-T1-GE3 electronic components. SIDR638DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR638DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDR638DP-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SIDR638DP-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 40V 100A SO-8
Toa :
TrenchFET® Gen IV
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.88 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
204nC @ 10V
Vgs (Max) :
+20V, -16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
10500pF @ 20V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
125W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SO-8DC
Paepae / Take :
PowerPAK® SO-8
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