SI4435FDY-T1-GE3 Utu (USD) [610452Stock Ngahau]
- 1 pcs$0.06059
- Te waahanga waahanga:
- SI4435FDY-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 30V 12.6A 8SOIC.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Tauhou - IGBT - Mahi, Taumanako - SCR, Diode - RF, Transistors - FETs, MOSFETs - Arrays, Tauhoko - SCR - Mahi, Transistors - IGBTs - Arrays and Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana) ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI4435FDY-T1-GE3 electronic components. SI4435FDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4435FDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4435FDY-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI4435FDY-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 30V 12.6A 8SOIC
Toa :
TrenchFET® Gen III
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
12.6A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
19 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1500pF @ 15V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
4.8W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
8-SOIC
Paepae / Take :
8-SOIC (0.154", 3.90mm Width)
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