Vishay Siliconix - SIHB33N60ET1-GE3

KEY Part #: K6417049

SIHB33N60ET1-GE3 Utu (USD) [24071Stock Ngahau]

  • 1 pcs$1.71212

Te waahanga waahanga:
SIHB33N60ET1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 600V 33A TO263.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Arrays, Transistors - Takenga Motuhake, Diode - Kaiwhiwhi - Kotahi, Transistors - Whakahoahoa Whakahoahoa and Tauhoko - TRIACs ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIHB33N60ET1-GE3 electronic components. SIHB33N60ET1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB33N60ET1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB33N60ET1-GE3 Nga Hua Hua

Te waahanga waahanga : SIHB33N60ET1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 600V 33A TO263
Toa : E
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 33A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3508pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 278W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : TO-263 (D²Pak)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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