Vishay Siliconix - SIR802DP-T1-GE3

KEY Part #: K6401465

SIR802DP-T1-GE3 Utu (USD) [3041Stock Ngahau]

  • 3,000 pcs$0.24972

Te waahanga waahanga:
SIR802DP-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 20V 30A PPAK SO-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Te Tauira P taraihi Mana, Tauhoko - TRIACs, Transistors - FETs, MOSFETs - Kotahi, Taumanako - SCR, Transistors - Whakahoahoa Whakahoahoa and Diode - Rectifiers - Arrays ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIR802DP-T1-GE3 electronic components. SIR802DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR802DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR802DP-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIR802DP-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 20V 30A PPAK SO-8
Toa : TrenchFET®
Wāhanga wahi : Obsolete
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 30A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1785pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 4.6W (Ta), 27.7W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8
Paepae / Take : PowerPAK® SO-8