BSB104N08NP3GXUSA1 Utu (USD) [142021Stock Ngahau]
- 1 pcs$0.26044
- 5,000 pcs$0.23897
- Te waahanga waahanga:
- BSB104N08NP3GXUSA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 80V 13A 2WDSON.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Te Tauira P taraihi Mana, Transistors - IGBTs - Kotahi, Tauhoko - TRIACs, Tauhoko - DIACs, SIDACs, Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
- Whakapai Tinana:
- We specialize in Infineon Technologies BSB104N08NP3GXUSA1 electronic components. BSB104N08NP3GXUSA1 can be shipped within 24 hours after order. If you have any demands for BSB104N08NP3GXUSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB104N08NP3GXUSA1 Nga Hua Hua
Te waahanga waahanga :
BSB104N08NP3GXUSA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 80V 13A 2WDSON
Toa :
OptiMOS™
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
80V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
13A (Ta), 50A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Kaari Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
2100pF @ 40V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
2.8W (Ta), 42W (Tc)
Taumaha Mahi :
-40°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
MG-WDSON-2, CanPAK M™
Paepae / Take :
3-WDSON
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