Infineon Technologies - IPP60R099CPAAKSA1

KEY Part #: K6416768

IPP60R099CPAAKSA1 Utu (USD) [18522Stock Ngahau]

  • 1 pcs$2.22502
  • 500 pcs$2.04131

Te waahanga waahanga:
IPP60R099CPAAKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 600V 31A TO-220.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Transistors - JFET, Transistors - Takenga Motuhake, Diode - Zener - Tuhinga, Diode - Rectifiers - Arrays, Transistors - IGBTs - Kotahi, Tauhoko - DIACs, SIDACs and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP60R099CPAAKSA1 Nga Hua Hua

Te waahanga waahanga : IPP60R099CPAAKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 600V 31A TO-220
Toa : CoolMOS™
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 31A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 105 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.2mA
Kaari Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2800pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 255W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3

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