Vishay Siliconix - SIHB24N65EF-GE3

KEY Part #: K6409633

SIHB24N65EF-GE3 Utu (USD) [13612Stock Ngahau]

  • 1 pcs$2.93065
  • 10 pcs$2.61776
  • 100 pcs$2.14656
  • 500 pcs$1.73819
  • 1,000 pcs$1.46594

Te waahanga waahanga:
SIHB24N65EF-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 650V 24A D2PAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Taumanako - SCR, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Takenga Motuhake, Transistors - Whakahoahoa Whakahoahoa, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF and Diode - Rectifiers - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB24N65EF-GE3 Nga Hua Hua

Te waahanga waahanga : SIHB24N65EF-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 650V 24A D2PAK
Toa : E
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 650V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 24A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 156 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2774pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 250W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB