Infineon Technologies - IPP65R190CFDAAKSA1

KEY Part #: K6417639

IPP65R190CFDAAKSA1 Utu (USD) [37177Stock Ngahau]

  • 1 pcs$1.05173
  • 500 pcs$1.03737

Te waahanga waahanga:
IPP65R190CFDAAKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 650V TO-220-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kotahi, Diode - Rectifiers - Arrays, Transistors - JFET, Transistors - IGBTs - Arrays and Tauhoko - TRIACs ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R190CFDAAKSA1 Nga Hua Hua

Te waahanga waahanga : IPP65R190CFDAAKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 650V TO-220-3
Toa : Automotive, AEC-Q101, CoolMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 650V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 17.5A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 700µA
Kaari Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1850pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 151W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3

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