Toshiba Semiconductor and Storage - TJ60S06M3L(T6L1,NQ

KEY Part #: K6419297

TJ60S06M3L(T6L1,NQ Utu (USD) [102769Stock Ngahau]

  • 1 pcs$0.40559
  • 2,000 pcs$0.40357

Te waahanga waahanga:
TJ60S06M3L(T6L1,NQ
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
MOSFET P-CH 60V 60A DPAK-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Transistors - IGBTs - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Diode - Zener - Tuhinga and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TJ60S06M3L(T6L1,NQ Nga Hua Hua

Te waahanga waahanga : TJ60S06M3L(T6L1,NQ
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : MOSFET P-CH 60V 60A DPAK-3
Toa : U-MOSVI
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 60A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 11.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : 156nC @ 10V
Vgs (Max) : +10V, -20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 7760pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 100W (Tc)
Taumaha Mahi : 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : DPAK+
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63