Vishay Siliconix - SI4833BDY-T1-GE3

KEY Part #: K6421024

SI4833BDY-T1-GE3 Utu (USD) [330394Stock Ngahau]

  • 1 pcs$0.11195
  • 2,500 pcs$0.10535

Te waahanga waahanga:
SI4833BDY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CHANNEL 30V 4.6A 8SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - FET, MOSFETs - RF, Taumanako - SCR, Transistors - Whakahoahoa Whakahoahoa, Tauhou - IGBT - Mahi, Transistors - Takenga Motuhake, Diode - Zener - Kotahi and Diode - Nga Kete Aiana ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI4833BDY-T1-GE3 electronic components. SI4833BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4833BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4833BDY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4833BDY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CHANNEL 30V 4.6A 8SOIC
Toa : LITTLE FOOT®
Wāhanga wahi : Obsolete
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 4.6A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 68 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 350pF @ 15V
Āhuahanga FET : Schottky Diode (Isolated)
Te Whakamau Kaha (Max) : 2.75W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SOIC
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)