Vishay Siliconix - SISH434DN-T1-GE3

KEY Part #: K6393435

SISH434DN-T1-GE3 Utu (USD) [168713Stock Ngahau]

  • 1 pcs$0.21923

Te waahanga waahanga:
SISH434DN-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CHAN 40V PPAK 1212-8SH.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Transistors - FETs, MOSFETs - Kotahi, Transistors - IGBTs - Kotahi, Tauhoko - SCR - Mahi, Tauhoko - TRIACs, Tauhoko - DIACs, SIDACs and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SISH434DN-T1-GE3 electronic components. SISH434DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH434DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISH434DN-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SISH434DN-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CHAN 40V PPAK 1212-8SH
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 17.6A (Ta), 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.6 mOhm @ 16.2A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1530pF @ 20V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 3.8W (Ta), 52W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8SH
Paepae / Take : PowerPAK® 1212-8SH