Vishay Siliconix - SI7888DP-T1-GE3

KEY Part #: K6405965

[8667Stock Ngahau]


    Te waahanga waahanga:
    SI7888DP-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 30V 9.4A PPAK SO-8.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Diode - Rectifiers - Arrays, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - TRIACs and Tauhoko - DIACs, SIDACs ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI7888DP-T1-GE3 electronic components. SI7888DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7888DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7888DP-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SI7888DP-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 30V 9.4A PPAK SO-8
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.4A (Ta)
    Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 12 mOhm @ 12.4A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 10.5nC @ 5V
    Vgs (Max) : ±12V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 1.8W (Ta)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8
    Paepae / Take : PowerPAK® SO-8