Infineon Technologies - IPB160N04S4H1ATMA1

KEY Part #: K6402046

IPB160N04S4H1ATMA1 Utu (USD) [82489Stock Ngahau]

  • 1 pcs$0.47401
  • 1,000 pcs$0.43487

Te waahanga waahanga:
IPB160N04S4H1ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 40V 160A TO263-7.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FET, MOSFETs - RF, Diode - Rectifiers - Arrays and Taumanako - SCR ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB160N04S4H1ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB160N04S4H1ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 40V 160A TO263-7
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 160A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 110µA
Kaari Gate (Qg) (Max) @ Vgs : 137nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 10920pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 167W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO263-7-3
Paepae / Take : TO-263-7, D²Pak (6 Leads + Tab)

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