Infineon Technologies - IPB90N04S402ATMA1

KEY Part #: K6419033

IPB90N04S402ATMA1 Utu (USD) [88370Stock Ngahau]

  • 1 pcs$0.44247
  • 1,000 pcs$0.40592

Te waahanga waahanga:
IPB90N04S402ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 40V 90A TO263-3-2.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi, Transistors - FETs, MOSFETs - Kotahi, Taumanako - SCR, Diode - Kaiwhiwhi - Kotahi, Diode - Nga Kete Aiana and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB90N04S402ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB90N04S402ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 40V 90A TO263-3-2
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 90A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id : 4V @ 95µA
Kaari Gate (Qg) (Max) @ Vgs : 118nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 9430pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 150W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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