SI4196DY-T1-GE3 Utu (USD) [316935Stock Ngahau]
- 1 pcs$0.11729
- 2,500 pcs$0.11670
- Te waahanga waahanga:
- SI4196DY-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 20V 8A 8SOIC.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - RF, Taumanako - SCR, Diode - Zener - Tuhinga, Tauhoko - TRIACs and Te Tauira P taraihi Mana ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI4196DY-T1-GE3 electronic components. SI4196DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4196DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4196DY-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI4196DY-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 20V 8A 8SOIC
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
8A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
27 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
22nC @ 8V
Vgs (Max) :
±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
830pF @ 10V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
2W (Ta), 4.6W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
8-SO
Paepae / Take :
8-SOIC (0.154", 3.90mm Width)
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