Infineon Technologies - IPB200N25N3GATMA1

KEY Part #: K6417058

IPB200N25N3GATMA1 Utu (USD) [24269Stock Ngahau]

  • 1 pcs$1.69814

Te waahanga waahanga:
IPB200N25N3GATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 250V 64A TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kotahi, Transistors - IGBTs - Kotahi, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB200N25N3GATMA1 Nga Hua Hua

Te waahanga waahanga : IPB200N25N3GATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 250V 64A TO263-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 250V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 64A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 64A, 10V
Vgs (th) (Max) @ Id : 4V @ 270µA
Kaari Gate (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 7100pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 300W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263AB)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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