Infineon Technologies - BSZ110N06NS3GATMA1

KEY Part #: K6418035

BSZ110N06NS3GATMA1 Utu (USD) [296365Stock Ngahau]

  • 1 pcs$0.12480

Te waahanga waahanga:
BSZ110N06NS3GATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 60V 20A TSDSON-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - Kaiwhiwhi - Kotahi, Diode - Nga Kete Aiana, Transistors - Takenga Motuhake, Taumanako - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased and Transistors - FETs, MOSFETs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ110N06NS3GATMA1 Nga Hua Hua

Te waahanga waahanga : BSZ110N06NS3GATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 60V 20A TSDSON-8
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 20A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 23µA
Kaari Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2700pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.1W (Ta), 50W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TSDSON-8
Paepae / Take : 8-PowerVDFN

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