Infineon Technologies - IPT015N10N5ATMA1

KEY Part #: K6417435

IPT015N10N5ATMA1 Utu (USD) [22836Stock Ngahau]

  • 1 pcs$1.80477
  • 2,000 pcs$1.79091

Te waahanga waahanga:
IPT015N10N5ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 300A 8HSOF.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - RF, Tauhoko - SCR - Mahi, Diode - Kaiwhiwhi - Kotahi, Transistors - Takenga Motuhake, Transistors - FETs, MOSFETs - Arrays, Diode - Zener - Kotahi and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPT015N10N5ATMA1 Nga Hua Hua

Te waahanga waahanga : IPT015N10N5ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 100V 300A 8HSOF
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 300A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.5 mOhm @ 150A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 211nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 16000pF @ 50V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 375W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-HSOF-8-1
Paepae / Take : 8-PowerSFN

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