SISH410DN-T1-GE3 Utu (USD) [183360Stock Ngahau]
- 1 pcs$0.20172
- Te waahanga waahanga:
- SISH410DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CHAN PPAK 1212-8SH.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Kotahi, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Zener - Kotahi, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Tauhoko - SCR - Mahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SISH410DN-T1-GE3 electronic components. SISH410DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH410DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH410DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SISH410DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CHAN PPAK 1212-8SH
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
22A (Ta), 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1600pF @ 10V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
3.8W (Ta), 52W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8SH
Paepae / Take :
PowerPAK® 1212-8SH
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