SI4943BDY-T1-GE3 Utu (USD) [93995Stock Ngahau]
- 1 pcs$0.41807
- 2,500 pcs$0.41599
- Te waahanga waahanga:
- SI4943BDY-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2P-CH 20V 6.3A 8-SOIC.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - DIACs, SIDACs, Diode - Nga Kete Aiana, Te Tauira P taraihi Mana, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Kotahi, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Arrays and Transistors - JFET ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI4943BDY-T1-GE3 electronic components. SI4943BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4943BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4943BDY-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI4943BDY-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2P-CH 20V 6.3A 8-SOIC
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 P-Channel (Dual)
Āhuahanga FET :
Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) :
20V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
6.3A
Rds On (Max) @ Id, Vgs :
19 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
25nC @ 5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Te Mana - Max :
1.1W
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
8-SOIC (0.154", 3.90mm Width)
Paetukutuku Pūrere Kaiwhakarato :
8-SO
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