Vishay Siliconix - SIZ200DT-T1-GE3

KEY Part #: K6525319

SIZ200DT-T1-GE3 Utu (USD) [192003Stock Ngahau]

  • 1 pcs$0.19264

Te waahanga waahanga:
SIZ200DT-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH DUAL 30V.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Zener - Kotahi, Transistors - FETs, MOSFETs - Arrays, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhou - IGBT - Mahi and Transistors - Takenga Motuhake ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ200DT-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIZ200DT-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH DUAL 30V
Toa : TrenchFET® Gen IV
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 28nC @ 10V, 30nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1510pF @ 15V, 1600pF @ 15V
Te Mana - Max : 4.3W (Ta), 33W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 8-PowerWDFN
Paetukutuku Pūrere Kaiwhakarato : 8-PowerPair® (3.3x3.3)

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