IPB039N10N3GE8187ATMA1 Utu (USD) [55877Stock Ngahau]
- 1 pcs$0.70326
- 1,000 pcs$0.69976
- Te waahanga waahanga:
- IPB039N10N3GE8187ATMA1
- Kaihanga:
- Infineon Technologies
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 100V 160A TO263-7.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Tuhinga, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays and Tauhou - IGBT - Mahi ...
- Whakapai Tinana:
- We specialize in Infineon Technologies IPB039N10N3GE8187ATMA1 electronic components. IPB039N10N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB039N10N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB039N10N3GE8187ATMA1 Nga Hua Hua
Te waahanga waahanga :
IPB039N10N3GE8187ATMA1
Kaihanga :
Infineon Technologies
Whakaahuatanga :
MOSFET N-CH 100V 160A TO263-7
Toa :
OptiMOS™
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
100V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
160A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
6V, 10V
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 160µA
Kaari Gate (Qg) (Max) @ Vgs :
117nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
8410pF @ 50V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
214W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PG-TO263-7
Paepae / Take :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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