SI2319DDS-T1-GE3 Utu (USD) [479744Stock Ngahau]
- 1 pcs$0.07710
- Te waahanga waahanga:
- SI2319DDS-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CHAN 40V.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Diode - Zener - Kotahi, Transistors - Takenga Motuhake, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, Tauhoko - TRIACs and Transistors - Bipolar (BJT) - RF ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI2319DDS-T1-GE3 electronic components. SI2319DDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2319DDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2319DDS-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI2319DDS-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CHAN 40V
Toa :
TrenchFET® Gen III
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
2.7A (Ta), 3.6A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
650pF @ 20V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
1W (Ta), 1.7W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
SOT-23-3 (TO-236)
Paepae / Take :
TO-236-3, SC-59, SOT-23-3
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