Vishay Siliconix - SUD35N10-26P-T4GE3

KEY Part #: K6393673

SUD35N10-26P-T4GE3 Utu (USD) [84051Stock Ngahau]

  • 1 pcs$0.46521
  • 2,500 pcs$0.43586

Te waahanga waahanga:
SUD35N10-26P-T4GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 35A TO252.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Whakahoahoa Whakahoahoa, Taumanako - SCR, Diode - Zener - Kotahi, Transistors - JFET, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD35N10-26P-T4GE3 Nga Hua Hua

Te waahanga waahanga : SUD35N10-26P-T4GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 100V 35A TO252
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 35A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 7V, 10V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2000pF @ 12V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 8.3W (Ta), 83W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : TO-252, (D-Pak)
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63