Vishay Siliconix - SQJ912BEP-T1_GE3

KEY Part #: K6525259

SQJ912BEP-T1_GE3 Utu (USD) [152759Stock Ngahau]

  • 1 pcs$0.24213

Te waahanga waahanga:
SQJ912BEP-T1_GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH DUAL 40V PPSO-8L.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Nga Kete Aiana, Transistors - FETs, MOSFETs - Kotahi, Diode - Kaiwhiwhi - Kotahi, Transistors - Takenga Motuhake and Transistors - Whakahoahoa Whakahoahoa ...
Whakapai Tinana:
We specialize in Vishay Siliconix SQJ912BEP-T1_GE3 electronic components. SQJ912BEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ912BEP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ912BEP-T1_GE3 Nga Hua Hua

Te waahanga waahanga : SQJ912BEP-T1_GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH DUAL 40V PPSO-8L
Toa : Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 30A (Tc)
Rds On (Max) @ Id, Vgs : 11 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3000pF @ 25V
Te Mana - Max : 48W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : PowerPAK® SO-8 Dual
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8 Dual